Sensitivity estimation of indium oxide thin film for gamma sensing

Thickness Dependence of Sensitivity in Thin Film Tin Oxide Gas Sensors Deposited by Vapor Pyrolysis

Transparent SnO2 thin films were deposited on porcelain substrates using a chemical vapor deposition technique based on the hydrolysis of SnCl4 at elevated temperatures. A reduced pressure self-contained evaporation chamber was designed for the process where the pyrolysis of SnCl4 at the presence of water vapor was carried out. Resistive gas sensors were fabricated by providing ohmic contacts o...

Copper (II) oxide thin film for methanol and ethanol sensing

A nanostructured copper (II) oxide film deposited by reactive DC-magnetron sputtering technique, has been studied for static sensor response towards methanol and ethanol by operating temperature and analyte concentration modulations. The optimum operating temperature (Topt) for the sensing of methanol and ethanol is observed to be 350 ̊C and 400 ̊C, respectively. The maximum sensitivity observe...

An oxidation-last annealing for enhancing the reliability of indium-gallium-zinc oxide thin-film transistors

Atomic-Layer-Deposition of Indium Oxide Nano-films for Thin-Film Transistors

Atomic-layer-deposition (ALD) of In2O3 nano-films has been investigated using cyclopentadienyl indium (InCp) and hydrogen peroxide (H2O2) as precursors. The In2O3 films can be deposited preferentially at relatively low temperatures of 160-200 °C, exhibiting a stable growth rate of 1.4-1.5 Å/cycle. The surface roughness of the deposited film increases gradually with deposition temperature, which...

Development of Source/Drain Electrodes for Amorphous Indium Gallium Zinc Oxide Thin Film Transistors

Tantalum etched by H2O2 solution shows best performance to be the source/drain electrodes of inverted staggered amorphous Indium Gallium Zinc Oxide thin film transistors among the investigated five metal materials. In addition, the etching property is improved significantly by adding aqueous ammonia properly.